Activation transport under quantum Hall regime in HgTe-based heterostructure

Автор(и)

  • S.V. Gudina M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences 18 S. Kovalevskaya Str., Ekaterinburg 620137, Russia
  • N.N. Mikhailov A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences 13 Akad. Lavrent’eva Ave., Novosibirsk 630090, Russia
  • M.V. Yakunin M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences 18 S. Kovalevskaya Str., Ekaterinburg 620137, Russia
  • S.M. Podgornykh M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences 18 S. Kovalevskaya Str., Ekaterinburg 620137, Russia
  • N.G. Shelushinina M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences 18 S. Kovalevskaya Str., Ekaterinburg 620137, Russia
  • G.I. Harus M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences 18 S. Kovalevskaya Str., Ekaterinburg 620137, Russia
  • E.V. Ilchenko M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences 18 S. Kovalevskaya Str., Ekaterinburg 620137, Russia
  • E.G. Novik Physikalisches Institut (EP3), University of Würzburg, Würzburg 97074, Germany
  • V.N. Neverov M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences 18 S. Kovalevskaya Str., Ekaterinburg 620137, Russia
  • S.A. Dvoretsky A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences 13 Akad. Lavrent’eva Ave., Novosibirsk 630090, Russia

DOI:

https://doi.org/10.1063/1.4983183

Ключові слова:

quantum well, activation magnetotransport, effective mass, g factor.

Анотація

We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30–75 were found.

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Опубліковано

2017-02-20

Як цитувати

(1)
Gudina, S.; Mikhailov, N.; Yakunin, M.; Podgornykh, S.; Shelushinina, N.; Harus, G.; Ilchenko, E.; Novik, E.; Neverov, V.; Dvoretsky, S. Activation Transport under Quantum Hall Regime in HgTe-Based Heterostructure. Fiz. Nizk. Temp. 2017, 43, 605-611.

Номер

Том 43 № 4 (2017)

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