Quantum Hall effect in p-Ge/Ge1-xSix heterostructures with low hole mobility
Электронные свойства низкоразмерных систем
DOI (Low Temperature Physics):
https://doi.org/10.1063/1.2409651Ключові слова:
Quantum Hall effects, heterostructures.Анотація
The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor n = 1 has been investigated in p-type Ge/Ge1–xSix heterostructures with eFt / ħ ≈ 1. Scaling analysis is carried out for both the low- and high-field transition point. In low magnetic fields wct < 1 pronounced QH-like peculiarities for n = 1 are also observed in both the longitudinal and Hall resistivities. Such behavior may be evidence of a localization effect in the mixing region of Landau levels and is inherent for two-dimensional structures in a vicinity of the metal—insulator transition.
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2007-02-05
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Yu.G. Arapov, G.I. Harus, I.V. Karskanov, V.N. Neverov, N.G. Shelushinina, M.V. Yakunin, O.A. Kuznetsov, L. Ponomarenko, and A. de Visser, Quantum Hall effect in p-Ge/Ge1-xSix heterostructures with low hole mobility: Электронные свойства низкоразмерных систем, Low Temp. Phys. 33, (2007) [Fiz. Nizk. Temp. 33, 207-210, (2007)] DOI: https://doi.org/10.1063/1.2409651.
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