Quantum Hall effect in p-Ge/Ge1-xSix heterostructures with low hole mobility

Электронные свойства низкоразмерных систем

Автор(и)

  • Yu.G. Arapov Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
  • G.I. Harus Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
  • I.V. Karskanov Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
  • V.N. Neverov Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
  • N.G. Shelushinina Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
  • M.V. Yakunin Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
  • O.A. Kuznetsov Physico-Technical Institute at Nizhnii Novgorod State University, Nizhnii Novgorod, Russia
  • L. Ponomarenko Van der Waals—Zeeman Institute, University of Amsterdam, The Netherlands
  • A. de Visser Van der Waals—Zeeman Institute, University of Amsterdam, The Netherlands

DOI:

https://doi.org/10.1063/1.2409651

Ключові слова:

Quantum Hall effects, heterostructures.

Анотація

The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor n = 1 has been investigated in p-type Ge/Ge1–xSix heterostructures with eFt / ħ ≈ 1. Scaling analysis is carried out for both the low- and high-field transition point. In low magnetic fields wct < 1 pronounced QH-like peculiarities for n = 1 are also observed in both the longitudinal and Hall resistivities. Such behavior may be evidence of a localization effect in the mixing region of Landau levels and is inherent for two-dimensional structures in a vicinity of the metal—insulator transition.

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Опубліковано

2007-02-05

Як цитувати

(1)
Arapov, Y.; Harus, G.; Karskanov, I.; Neverov, V.; Shelushinina, N.; Yakunin, M.; Kuznetsov, O.; Ponomarenko, L.; Visser, A. de. Quantum Hall Effect in p-Ge/Ge1-xSix Heterostructures With Low Hole Mobility: Электронные свойства низкоразмерных систем. Fiz. Nizk. Temp. 2007, 33, 207-210.

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