Density of states of Dirac–Landau levels in a gapped graphene monolayer under strain gradient

Автор(и)

  • V.O. Shubnyi Department of Physics, Taras Shevchenko National University of Kiev 6 Academician Glushkov Ave., Kiev 03680, Ukraine
  • S.G. Sharapov Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine 14-b Metrolohichna Str., Kiev 03680, Ukraine

DOI:

https://doi.org/10.1063/1.5008413

Ключові слова:

Landau levels, graphene, strain.

Анотація

We study a gapped graphene monolayer in a combination of uniform magnetic field and strain-induced uniform pseudomagnetic field. The presence of two fields completely removes the valley degeneracy. The resulting density of states shows a complicated behavior that can be tuned by adjusting the strength of the fields. We analyze how these features can be observed in the sublattice, valley and full density of states. The analytical expression for the valley DOS is derived.

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Опубліковано

2017-08-21

Як цитувати

(1)
Shubnyi, V.; Sharapov, S. Density of States of Dirac–Landau Levels in a Gapped Graphene Monolayer under Strain Gradient. Fiz. Nizk. Temp. 2017, 43, 1508-1514.

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