Effect of next-to-nearest neighbor hopping on electronic properties of graphene

Graphene and graphite multilayers

Автор(и)

  • Y.F. Suprunenko Bogolyubov Institute for Theoretical Physics of the National Academy of Sciences of Ukraine 14-b Metrolohichna Str., Kiev 03680, Ukraine
  • E.V. Gorbar Bogolyubov Institute for Theoretical Physics of the National Academy of Sciences of Ukraine 14-b Metrolohichna Str., Kiev 03680, Ukraine
  • S.G. Sharapov Physics Department, Western Illinois University, Macomb, Illinois 61455, USA
  • V.M. Loktev Bogolyubov Institute for Theoretical Physics of the National Academy of Sciences of Ukraine 14-b Metrolohichna Str., Kiev 03680, Ukraine

DOI:

https://doi.org/10.1063/1.2981394

Ключові слова:

graphene, electron density of states, magnetic field, Berry phase.

Анотація

In the tight-binding approximation, we take into account the next-to-nearest neighbor hopping in graphene that leads to nonrelativistic-like corrections in its low energy spectrum. The electronic density of states in a magnetic field is found and the fan diagram is plotted, which interpolates between those for the relativistic and nonrelativistic limiting cases. It is shown that the Berry phase for the system under consideration coincides exactly with its value for the relativistic system.

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Опубліковано

2008-09-05

Як цитувати

(1)
Suprunenko, Y.; Gorbar, E.; Sharapov, S.; Loktev, V. Effect of Next-to-Nearest Neighbor Hopping on Electronic Properties of Graphene: Graphene and Graphite Multilayers. Fiz. Nizk. Temp. 2008, 34, 1033-1039.

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