Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd0.52Sr0.48MnO3 thin films
DOI:
https://doi.org/10.1063/1.3592229Ключові слова:
colossal magnetoresistance, charge ordering, percolation, magnetic films.Анотація
Nd0.52Sr0.48MnO3 films with the different thickness have been prepared by dc magnetron sputtering on LaAlO3 (001) single-crystalline substrates. A decrease of the film thickness leads to a significant suppression of the ferromagnetic (FM) ordering and the Curie point becomes below the antiferromagnetic (AFM) transition temperature. As this take place, a huge rise of the magnetoresistance ratio from 400 to 60 000% at an applied magnetic field of 5 T is observed. We consider that this new kind of the enhanced colossal magnetoresistance effect is originated from the FM/AFM competition and the collapse of the charge-ordered state at high magnetic field rather than through the regular double-exchange mechanism.Завантаження
Дані завантаження ще не доступні.
Downloads
Опубліковано
2011-02-28
Як цитувати
(1)
Prokhorov, V.; Nikolaenko, Y.; Levtchenko, G.; Svetchnikov, V.; Lee, Y.; Park, J.; Eom, T.; Kim, J.; Kaminsky, G.; Khokhlov, V. Origin of an Enhanced Colossal Magnetoresistance Effect in Epitaxial Nd0.52Sr0.48MnO3 Thin Films. Fiz. Nizk. Temp. 2011, 37, 392-396.
Номер
Розділ
Низькотемпературний магнетизм