Exciton-induced lattice defect formation

Автор(и)

  • E.V. Savchenko B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Science of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine
  • A.N. Ogurtsov B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Science of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine
  • G. Zimmerer Institut für Experimentalphysik der Universität Hamburg, Hamburg 22761, Germany

DOI:

https://doi.org/10.1063/1.1542448

Ключові слова:

PACS: 61.82.Ms, 71.35.-y, 78.55.Hx

Анотація

The lattice defect formation in solid Ne induced by electronic excitation was studied using the selective vacuum ultraviolet spectroscopy method. The samples were excited with synchrotron radiation in the range of excitonic absorption n = 2Г(3/2). The dose dependence of the intensity distribution in the band of atomic type self-trapped exciton luminescence was analyzed. A direct evidence of the formation and accumulation of point lattice defects in solid Ne via the excitonic mechanism was obtained for the first time. The model of the permanent lattice defect formation is discussed.

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Опубліковано

2003-02-02

Як цитувати

(1)
Savchenko, E.; Ogurtsov, A.; Zimmerer, G. Exciton-Induced Lattice Defect Formation. Fiz. Nizk. Temp. 2003, 29, 356-360.

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