Kinetic study of inelastic radiation-induced processes in rare-gas cryocrystals

Electronic Processes in Cryocrystals

Автор(и)

  • A.N. Ogurtsov National Technical University «KhPI», 21 Frunse Str., Kharkov 61002, Ukraine
  • N.Yu. Masalitina National Technical University «KhPI», 21 Frunse Str., Kharkov 61002, Ukraine
  • O.N. Bliznjuk National Technical University «KhPI», 21 Frunse Str., Kharkov 61002, Ukraine

DOI:

https://doi.org/10.1063/1.2746242

Ключові слова:

rare-gas crystals, self-trapping, Frenkel pairs, defect accumulation.

Анотація

The processes of large-scale atomic displacements induced by exciton self-trapping were studied using the selective vacuum ultraviolet luminescence method. Models of Frenkel pairs creation in rare-gas crystals are discussed with a focus on excited-state mechanisms of defect formation. A simple kinetic model of defect accumulation in rare-gas samples is proposed.

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Опубліковано

2007-05-30

Як цитувати

(1)
Ogurtsov, A.; Masalitina, N.; Bliznjuk, O. Kinetic Study of Inelastic Radiation-Induced Processes in Rare-Gas Cryocrystals: Electronic Processes in Cryocrystals. Fiz. Nizk. Temp. 2007, 33, 689-693.

Номер

Том 33 № 6-7 (2007)

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