Microwave detectors based on the spin-torque diode effect

Автор(и)

  • O.V. Prokopenko Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska Str., Kyiv 01601, Ukraine
  • A.N. Slavin Oakland University, 2200 North Squirrel Rd., Rochester MI 48309, U.S.A.

DOI:

https://doi.org/10.1063/1.4919373%20

Ключові слова:

spin-transfer torque, spin-torque diode, spin-torque microwave detector, magnetization dynamics.

Анотація

The spin-transfer torque (STT) effect provides a new method of manipulation of magnetization in nanoscale objects. The STT effect manifests itself as a transfer of spin angular momentum between the parallel magnetic layers separated by a nonmagnetic spacer and traversed by a dc electric current. The transfer of the spin angular momentum from one layer to another could result in the excitation of the microwave-frequency magnetization dynamics in one of the magnetic layers. On the other hand, when a magnetization dynamics is excited in a magnetic layered structure by an external microwave signal both the structure electrical resistance and current through the structure will acquire microwave components resulting in the appearance of a rectified dc voltage on the magnetic structure. This “spin-torque diode effect” can be used for the development of ultra-sensitive spintorque microwave detectors (STMD). Below we present a brief review of our recent work on the general properties of STMDs, analyze the performance of the “resonance-type” and “threshold-type STMD” and consider the possible applications for such microwave detectors.

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Опубліковано

2015-03-18

Як цитувати

(1)
Prokopenko, O.; Slavin, A. Microwave Detectors Based on the Spin-Torque Diode Effect. Fiz. Nizk. Temp. 2015, 41, 457-465.

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