Coulomb blockade of spin-dependent shuttling
DOI:
https://doi.org/10.1063/1.4830420%20Ключові слова:
nanoelectromechanical systems, Coulomb blockade, spin-polarized transport, shuttle systems.Анотація
We show that nanomechanical shuttling of single electrons may enable qualitatively new functionality if spin-polarized electrons are injected into a nanoelectromechanical single-electron tunneling (NEM-SET) device. This is due to the combined effects of spin-dependent electron tunneling and Coulomb blockade of tunneling, which are phenomena that occur in certain magnetic NEM-SET devices. Two effects are predicted to occur in such structures. The first is a reentrant shuttle instability, by which we mean the sequential appearance, disappearance and again the appearance of a shuttle instability as the driving voltage is increased (or the mechanical dissipation is diminished). The second effect is an enhanced spin polarization of the nanomechanically assisted current flow.Завантаження
![](https://fnt.ilt.kharkiv.ua/public/journals/1/submission_39_1373_en_US.png)
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Опубліковано
2013-10-16
Як цитувати
(1)
Park, H. C.; Kadigrobov, A. M.; Shekhter, R. I.; Jonson, M. Coulomb Blockade of Spin-Dependent Shuttling. Fiz. Nizk. Temp. 2013, 39, 1373-1380.
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Електронні властивості провідних систем