Charge carrier self-organization in ferroelectromagnetic semiconductors Eu0.8Ce0.2Mn2O5

Автор(и)

  • E.I. Golovenchits A.F. Ioffe Physical Technical Institute of the RAS, 26 Politekhnicheskaya, St. Petersburg 194021, Russia
  • V.A. Sanina A.F. Ioffe Physical Technical Institute of the RAS, 26 Politekhnicheskaya, St. Petersburg 194021, Russia
  • V.G. Zalesskii A.F. Ioffe Physical Technical Institute of the RAS, 26 Politekhnicheskaya, St. Petersburg 194021, Russia
  • M.P. Scheglov A.F. Ioffe Physical Technical Institute of the RAS, 26 Politekhnicheskaya, St. Petersburg 194021, Russia

DOI:

https://doi.org/10.1063/1.3455792

Ключові слова:

multiferroic, ECMO, x-ray diffraction, dielectric and magnetic properties, conductivity.

Анотація

The state with a giant permittivity (ε΄ ~ 104) and ferromagnetism has been observed above 185 K (including room temperature) in single crystals of diluted semiconductor manganite–ferroelectromagnetic Eu0.8Ce0.2Mn2O5 in the investigations of x-ray diffraction, dielectric and magnetic properties, conductivity. X-ray diffraction study has revealed a layered superstructure along the c axis at room temperature. A model of the state with a giant ε΄ including as-grown 2D layers with doping impurities, charge carriers, and double-exchange coupled Mn3+–Mn4+ ion pairs is suggested. At low temperatures these layers form isolated electrically neutral small-size 1D superlattices, in which de Haas van Alphen oscillations were observed. As temperature grows and hopping conductivity increases, the charge carrier self-organization in the crystal cause formation of a layered superstructure consisting of charged layers (with an excess Mn3+ concentration) alternating with dielectric layers of the initial crystal — the ferroelectricity state due to charge ordering. Ferromagnetism results from double exchange between Mn3+ and Mn4+ ions through of charge carriers in the charged layers.

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Опубліковано

2010-04-23

Як цитувати

(1)
Golovenchits, E.; Sanina, V.; Zalesskii, V.; Scheglov, M. Charge Carrier Self-Organization in Ferroelectromagnetic Semiconductors Eu0.8Ce0.2Mn2O5. Fiz. Nizk. Temp. 2010, 36, 654-664.

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