Hall effect and magnetic ordering in RB12

Автор(и)

  • A.E. Baranovskiy B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
  • G.E. Grechnev B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
  • N.Yu. Shitsevalova Institute for Problems of Materials Science of NASU, Kiev 03680, Ukraine
  • D.N. Sluchanko A.M. Prokhorov General Physics Institute of RAS, 38 Vavilov Str., Moscow 119991, Russia
  • V.V. Glushkov A.M. Prokhorov General Physics Institute of RAS, 38 Vavilov Str., Moscow 119991, Russia
  • S.V. Demishev A.M. Prokhorov General Physics Institute of RAS, 38 Vavilov Str., Moscow 119991, Russia
  • N.E. Sluchanko A.M. Prokhorov General Physics Institute of RAS, 38 Vavilov Str., Moscow 119991, Russia

DOI:

https://doi.org/10.1063/1.3170932

Ключові слова:

Hall effect, RKKY model, borides, electronic structure, magnetic ordering.

Анотація

The concentration of carriers in LuB12 is evaluated theoretically by applying ab initio FP-LMTO calculations. Theoretical results are found to be in agreement with high precision measurements of the Hall RH(T) coefficient which were carried out on single crystals of the rare earth dodecaborides RB12 (R = Ho, Er, Tm, Lu) at temperatures 1.8–300 K. A nature of the antiferromagnetic ordering in RB12 is investigated within the RKKY-like model, which was supplemented by comprehensive electronic structure calculations for paramagnetic, ferromagnetic and antiferromagnetic phases.

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Опубліковано

2009-05-28

Як цитувати

(1)
Baranovskiy, A.; Grechnev, G.; Shitsevalova, N.; Sluchanko, D.; Glushkov, V.; Demishev, S.; Sluchanko, N. Hall Effect and Magnetic Ordering in RB12. Fiz. Nizk. Temp. 2009, 35, 721-724.

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Електронні властивості провідних систем

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