Photoluminescence of ZnSe nanocrystals at high excitation level

Автор(и)

  • V.V. Tishchenko Institute of Physics of the National Academy of Sciences of Ukraine, 46 Nauki Ave., Kyiv 03028, Ukraine
  • A.V. Kovalenko Dnipropetrovsk National University, 13 Naukova Str., Dnipropetrovsk 49050, Ukraine

DOI (Low Temperature Physics):


https://doi.org/10.1063/1.3132751

Ключові слова:

quantum dots, nanocrystals, biexciton, photoluminescence, ZnSe.

Анотація

The excitation-dependent photoluminescence (PL) of ZnSe nanocrystals (NC) grown on GaAs (100) substrate was studied. The PL spectra observed corroborate previous observations of a bimodal size distribution of NC grown, and, in addition, evidence the existence of spectral diffusion with extend dependent on excitation power. Besides, it was also shown that at relatively intense excitation an extra band has arose in luminescence spectra due to biexcitons confined in NC of 3.5–4.0 nm size. The binding energy of these biexcitons was as large as 23 meV.

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Опубліковано

2009-03-20

Як цитувати

(1)
V.V. Tishchenko and A.V. Kovalenko, Photoluminescence of ZnSe nanocrystals at high excitation level, Low Temp. Phys. 35, (2009) [Fiz. Nizk. Temp. 35, 524-527, (2009)] DOI: https://doi.org/10.1063/1.3132751.

Номер

Том 35 № 5 (2009)

Розділ

Квантові ефекти в напівпровідниках та діелектриках

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