Growth of 3He crystals at different magnetic fields

Твердый гелий

Автор(и)

  • J. Bueno Department of Physics, University of California, San Diego, 9500 Gilman Drive, La Jolla, CA 92093, USA
  • R. Blaauwgeers Helsinki University of Technology, P.O. Box 2200, FIN — 02015 HUT, Finland
  • A.Y. Parshin P.L. Kapitza Institute, 2 Kosygina Str., Moscow 119334, Russia
  • R. Jochemsen Kamerlingh Onnes Laboratory, LION, Leiden University, P.O. Box 9504, 2300 RA Leiden, The Netherlands

DOI:

https://doi.org/10.1063/1.2911656

Ключові слова:

3He crystal, magnetic field, mechanisms of crystal growth.

Анотація

The experiments on 3He crystal growth are carried out in magnetic field up 9 T. The data were analyzed and compared with the results found at zero magnetic field. It was found that the interface and the crystal lattice couple weakly in the presence of an external magnetic field, and we could set an upper limit of the step energy of the <110>, <100> and <211> facets at different magnetic fields.

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Опубліковано

2008-03-17

Як цитувати

(1)
Bueno, J.; Blaauwgeers, R.; Parshin, A.; Jochemsen, R. Growth of 3He Crystals at Different Magnetic Fields: Твердый гелий. Fiz. Nizk. Temp. 2008, 34, 447-458.

Номер

Том 34 № 4-5 (2008)

Розділ

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