Pressure effect on the Fermi surface and electronic structure of LuGa3 and TmGa3

Автор(и)

  • V.B. Pluzhnikov International Laboratory of High Magnetic Fields and Low Temperatures Gajowicka 95, 53-529 Wroclaw, Poland
  • G.E. Grechnev B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine
  • A. Czopnik B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine
  • O. Eriksson W. Trzebiatowski Institute of Low Temperature and Structure Research P.O. Box 1410, 50-950 Wroclaw, Poland

DOI:

https://doi.org/10.1063/1.1884445

Ключові слова:

PACS: 71.18. y, 71.20.Eh, 71.70.Gm

Анотація

The Fermi surfaces and cyclotron masses of LuGa3 and TmGa3 compounds are studied by means of the de Haas—van Alphen effect technique under pressure. The highly anisotropic pressure dependences of the de Haas—van Alphen frequencies and cyclotron masses have been observed in both compounds. Concurrently, the ab initio calculations of the volume-dependent band structures have been carried out for these compounds, including ferromagnetic configuration phase of TmGa3, by employing a relativistic version of the full-potential linear muffin-tin orbital method within the local spin-density approximation. The experimental data have been analysed on the basis of the calculated volume-dependent band structures and compared with the corresponding pressure effects in the isostructural compound ErGa3.

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Опубліковано

2005-02-16

Як цитувати

(1)
Pluzhnikov, V.; Grechnev, G.; Czopnik, A.; Eriksson, O. Pressure Effect on the Fermi Surface and Electronic Structure of LuGa3 and TmGa3. Fiz. Nizk. Temp. 2005, 31, 412-421.

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