Influence of dissipation on a low-voltage dc current in a long SNS junction

Сильно коррелированные системы и высокотемпературная сверхпроводимость

Автор(и)

  • Sergey I. Kulinich Department of Applied Physics, Chalmers University of Technology and Göteborg University, SE-412 96 Göteborg, Sweden
  • Robert I. Shekhter Department of Applied Physics, Chalmers University of Technology and Göteborg University, SE-412 96 Göteborg, Sweden

DOI:

https://doi.org/10.1063/1.1496665

Ключові слова:

PACS: 74.80.Fp, 74.50. r

Анотація

The dc current through a voltage-biased long transparent SNS junction in a dissipative regime is considered. The problem under certain conditions is mapped onto exactly solvable model of energy pumping into a quasiballistic 1D quantum ring driven by time-dependent magnetic flux. A rich peak-like structure of the subgap current at low voltages is predicted. The maxima in the current correspond to resonant energy absorption for fractional values of the normalized bias voltage.

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Опубліковано

2002-06-10

Як цитувати

(1)
Kulinich, S. I.; Shekhter, R. I. Influence of Dissipation on a Low-Voltage Dc Current in a Long SNS Junction: Сильно коррелированные системы и высокотемпературная сверхпроводимость. Fiz. Nizk. Temp. 2002, 28, 763-767.

Номер

Том 28 № 7 (2002)

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