Tunneling transport in semiconductor nanostructures considering the presence of a weak time-dependent electromagnetic field: Lewis–Riesenfeld approach
DOI (Low Temperature Physics):
https://doi.org/10.1063/10.0042294Ключові слова:
quasistationary states, electron tunnel transport, quantum mechanical invariant, resonance energy, resonance widthАнотація
Запропоновано квантово-механічну теорію електронного транспорту в напівпровідникових резонансно-тунельних структурах за умови впливу на процес тунелювання слабкого нетаціонарного електромагнітного поля та зовнішнього постійного електричного поля. Теорія розвинута шляхом побудови точних розв’язків повного рівняння Шредінгера з використанням методу Льюїса–Різенфельда, адаптованого до квазістаціонарних станів. Досліджено резонансні енергії та ширини квазістаціонарних електронних станів, а також їх еволюцію у часі з використанням параметрів активної зони квантового каскадного лазера. Шляхом розрахунків коефіцієнта прозорості наносистеми у різні моменти часу, які зумовлені релаксаційними процесами, проаналізовано процеси розпаду електронних квазістаціонарних станів у досліджуваній наносистемі та встановлені механізми цього процесу.
Посилання
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