On the nature of ionic liquid gating of Nd2–xCexCuO4 thin films

Автор(и)

  • Hasan Atesci Huygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 RA Leiden, The Netherlands
  • Francesco Coneri MESA+ Institute for Nanotechnology, University of Twente P.O. Box 217, 7500 AE Enschede, The Netherlands
  • Maarten Leeuwenhoek Huygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 RA Leiden, The Netherlands
  • Hans Hilgenkamp MESA+ Institute for Nanotechnology, University of Twente P.O. Box 217, 7500 AE Enschede, The Netherlands
  • Jan M. van Ruitenbeek Huygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 RA Leiden, The Netherlands

DOI:

https://doi.org/10.1063/1.4976636

Ключові слова:

Nd2–xCexCuO4, ionic liquid, conductance, electrochemistry, nanoionics.

Анотація

Recently, ionic liquid gating has been used to modulate the charge carrier properties of metal oxides. The mechanism behind it, however, is still a matter of debate. In this paper, we report experiments on doped and undoped Nd2–xCexCuO4. We find major resistance drops of the bilayer coupled to observations of the presence of a considerable Faradeic component in the gate current and of the appearance of charge transfer peaks in the cyclic voltammetry data. This leads us to propose a mechanism of gating based on irreversible electrochemical reactions, likely due to trace amounts of contaminations present in the ionic liquid. This work is therefore in line with previous reports confirming the presence of irreversible electrochemistry in ionic liquid gated electron-doped cuprates.

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Опубліковано

2016-12-19

Як цитувати

(1)
Atesci, H.; Coneri, F.; Leeuwenhoek, M.; Hilgenkamp, H.; Ruitenbeek, J. M. van. On the Nature of Ionic Liquid Gating of Nd2–xCexCuO4 Thin Films. Fiz. Nizk. Temp. 2016, 43, 353-359.

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