Thermoelectric amplification of phonons in graphene

Автор(и)

  • K.A. Dompreh Department of Physics, College of Agriculture and Natural Sciences, University of Cape Coast, Ghana
  • N.G. Mensah Department of Mathematics, College of Agriculture and Natural Sciences, University of Cape Coast, Ghana
  • S.Y. Mensah Department of Physics, College of Agriculture and Natural Sciences, University of Cape Coast, Ghana
  • S.K. Fosuhene Ghana Space Science and Technology Institute, Ghana Atomic Energy Commission, Ghana

DOI:

https://doi.org/10.1063/1.4954779%20

Ключові слова:

thermoelectric, graphene, acoustic phonon, amplification.

Анотація

Amplification of acoustic in-plane phonons due to an external temperature gradient (∇T) in single-layer graphene (SLG) was studied theoretically. The threshold temperature gradient (∇T)0g and the threshold voltage (VT)0g in SLG were evaluated. For T = 77 K, the calculated value for (∇T)0g 746.8 K/cm and (VT)0g=6.6mV. The calculationwas done in the hypersound regime. Further, the dependence of the normalized amplification (Γ/Γ0) on the frequency ωq and ∇T/T were evaluated numerically and presented graphically. The calculated threshold temperature gradient (∇T)0g for SLG was higher than that obtained for homogeneous semiconductors (n-InSb)(∇T)0hom ≈103 K/cm, superlattices (∇T)0SL = 384 K/cm, and cylindrical quantum wire (∇T)0cqw≈102 K/cm. This makes SLG a much better material for thermoelectric phonon amplification.

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Опубліковано

2018-06-06

Як цитувати

(1)
Dompreh, K.; Mensah, N.; Mensah, S.; Fosuhene, S. Thermoelectric Amplification of Phonons in Graphene. Fiz. Nizk. Temp. 2018, 42, 596-599.

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