Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

Автор(и)

  • T. Charikova Institute of Metal Physics RAS, Ekaterinburg, Russia
  • V. Okulov Institute of Metal Physics RAS, Ekaterinburg, Russia
  • A. Gubkin Institute of Metal Physics RAS, Ekaterinburg, Russia
  • A. Lugovikh Institute of Metal Physics RAS, Ekaterinburg, Russia
  • K. Moiseev Ioffe Institute, St. Petersburg, Russia
  • V. Nevedomsky Ioffe Institute, St. Petersburg, Russia
  • Yu. Kudriavtsev Departamento de Ingenieria Electrica–SEES, Cinvestav-IPN, Mexico
  • S. Gallardo Departamento de Ingenieria Electrica–SEES, Cinvestav-IPN, Mexico
  • M. Lopez Departamento de Fisica, Cinvestav-IPN, Mexico

DOI:

https://doi.org/10.1063/1.4906539%20

Ключові слова:

magnetic semiconductors, magnetization, depletion layer of manganese.

Анотація

The magnetic moment and magnetization in GaAs/Ga0.84In0.16As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass mag-netization all of the samples of GaAs/Ga0.84In0.16As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.

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Опубліковано

2014-12-18

Як цитувати

(1)
Charikova, T.; Okulov, V.; Gubkin, A.; Lugovikh, A.; Moiseev, K.; Nevedomsky, V.; Kudriavtsev, Y.; Gallardo, S.; Lopez, M. Magnetization in AIIIBV Semiconductor Heterostructures With the Depletion Layer of Manganese. Fiz. Nizk. Temp. 2014, 41, 207-209.

Номер

Том 41 № 2 (2015)

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