Photocurrent generation in single electron tunneling transistors

Автор(и)

  • Ola Tageman Department of Applied Physics, Chalmers University of Technology and Goteborg University S-41296 Goteborg, Sweden

DOI:

https://doi.org/10.1063/1.593728

Ключові слова:

PACS: 73.23.Hk

Анотація

A single-electron tunneling transistor (SET) with a non-equilibrium mode population in one of the leads is analyzed theoretically. We model transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. The non-equilibrium mode population, which is induced by coherent THz-pumping in the channel, produces empty states below the Fermi level for electrons to tunnel into. A photocurrent arises, which is periodically saw-tooth peaked with respect to the voltage on a central gate. For intense THz-fields the peaks display plateaus that reflect the energy dependence of the mode population. We also predict a high-gain Vin/Vout transfer-characteristic, similar to that of a current biased SET.

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Опубліковано

1999-03-10

Як цитувати

(1)
Tageman, O. Photocurrent Generation in Single Electron Tunneling Transistors. Fiz. Nizk. Temp. 1999, 25, 290-297.

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Низькоpозмірні та невпорядковані системи